tf252 no. a0841-1/4 sanyo semiconductors d ata sheet features high gain : g v =1.0db typ (v cc =2v, r l =2.2k ? , cin=5pf, v in =10mv, f=1khz). ultrasmall package facilitates miniaturization in end products [1.0mm ? 0.6mm ? 0.27mm (max 0.3mm)]. best suited for use in electret condenser microphone for audio equipments and telephones. excellent voltage characteristics. excellent transient characteristics. adoption of fbet process. halogen free compliance. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit gate-to-drain voltage v gdo - -20 v gate current i g 10 ma drain current i d 1ma allowable power dissipation p d 30 mw junction temperature tj 150 c storage temperature tstg - -55 to +150 c marking: d tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ENA0841 70407gb ti im tc-00000793 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. tf252 n-channel silicon junction fet electret condenser microphone applications
tf252 no. a0841-2/4 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit gate-to-drain breakdown voltage v (br)gdo i g =--100 a- -20 v cutoff voltage v gs (off) v ds =2v, i d =1 a- -0.1 --0.4 --1.0 v zero-gate voltage drain current i dss v ds =2v, v gs =0v 140* 350* a forward transfer admittance yfs v ds =2v, v gs =0v, f=1khz 0.8 1.4 ms input capacitance ciss v ds =2v, v gs =0v, f=1mhz 3.1 pf reverse transfer capacitance crss v ds =2v, v gs =0v, f=1mhz 0.95 pf [ta=25 c, v cc =2v, r l =2.2k 1 , cin=5pf, see specified test circuit.] v oltage gain g v v in =10mv, f=1khz 1.0 db reduced voltage characteristic 6 g vv v in =10mv, f=1khz, v cc =2.0 a 1.5v --0.6 --2.0 db frequency characteristic 6 gvf f=1khz to 110hz --1.0 db t otal harmonic distortion thd v in =30mv, f=1khz 0.65 % output noise voltage v no v in =0v, a curve --106 --102 db * : the tf252 is classified by i dss as follows : (unit : a) rank 45 i dss 140 to 240 210 to 350 package dimensions test circuit unit : mm (typ) 7055-001 i d -- v ds i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a 0 0.5 2.0 1.0 1.5 300 200 250 100 50 150 0 it12440 v gs =0v - -0.10v - -0.15v - -0.05v - -0.20v - -0.30v - -0.25v it12441 01 5 234 350 300 200 250 100 50 150 0 v gs =0v - -0.1v - -0.2v - -0.4v - -0.3v osc 5pf + 33 f 2.2k 1 v cc =2v v cc =1.5v v vtvm thd v oltage gain frequency characteristic distortion reduced voltage characteristic 1 : drain 2 : source 3 : gate sanyo : usfp
tf252 no. a0841-3/4 g v -- i dss 6 g vv -- i dss v gs (off) -- i dss yfs -- i dss ciss -- v ds crss -- v ds zero-gate voltage drain current, i dss -- a forward transfer admittance, y fs -- ms zero-gate voltage drain current, i dss -- a cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf drain-to-source voltage, v ds -- v zero-gate voltage drain current, i dss -- a v oltage gain, g v -- db zero-gate voltage drain current, i dss -- a reduced voltage characteristic, 6 g vv -- db i d -- v gs i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a it12448 - -1.0 - -0.8 - -0.6 - -0.4 - -0.2 - -0.9 - -0.7 - -0.5 - -0.3 - -0.4 - -0.2 0 0.4 0.8 1.2 0.2 0.6 1.0 1.8 1.6 1.4 - -0.20 - -0.25 - -0.30 - -0.35 - -0.40 - -0.55 - -0.50 - -0.45 - -0.60 100 150 200 250 300 400 350 it12449 100 150 200 250 300 400 350 v ds =2v i d =1 a 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 100 150 200 250 300 400 350 it12444 100 150 200 250 300 400 350 it12445 v ds =2v v gs =0v f=1khz 10 7 5 3 2 1.0 1.0 10 23 57 7 523 it12446 v gs =0v f=1mhz it12447 1.0 7 5 3 3 2 1.0 10 23 57 7 523 v gs =0v f=1mhz g v : v cc =2v v in =10mv f=1khz r l =2.2k 1 cin=5pf i dss : v ds =2v 400 300 200 100 0 it12442 it12443 - -0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 i dss = 350 a 250 a 150 a 350 250 50 150 v ds =2v 400 300 200 100 0 - -0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 ta= 75 c 25 c - -25 c 350 250 50 150 v ds =2v 6 g vv : v cc =2v a 1.5v v in =10mv f=1khz r l =2.2k 1 cin=5pf i dss : v ds =2v reverse transfer capacitance, crss -- pf
tf252 no. a0841-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- mw thd -- v in input voltage, v in -- m v t otal harmonic distortion, thd -- % thd -- i dss zero-gate voltage drain current, i dss -- a t otal harmonic distortion, thd -- % 10 2 3 5 7 2 2 3 5 7 1.0 0.1 050 100 150 200 it12450 100 150 200 250 300 400 350 250 a 350 a i dss =150 a 0 it12451 0.2 0.4 0.6 1.0 0.8 1.2 1.4 thd : v cc =2v v in =30mv f=1khz r l =2.2k 1 cin=5pf i dss : v ds =2v thd : v cc =2v f=1khz r l =2.2k 1 cin=5pf i dss : v ds =2v 20 30 25 35 10 5 15 0 0 160 140 120 100 80 60 40 20 it12452 this catalog provides information as of july, 2007. specifications and information herein are subject to change without notice.
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